Changes between Initial Version and Version 1 of Sony/Vaio/FE41Z/R0200J3BIOSBugs


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Timestamp:
18/07/08 20:48:56 (9 years ago)
Author:
tj
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  • Sony/Vaio/FE41Z/R0200J3BIOSBugs

    v1 v1  
     1[[PageOutline]] 
     2= R0200J3 BIOS Bugs = 
     3 
     4== ACPI DSDT errors == 
     5=== Top of (Low) Usable DRAM === 
     6It erroneously defines the PCI Configuration Space register TOLUD for the PCI root bridge (\_SB.PCI0.(HBUS.)TOUD) as 6 bits wide instead of 5. This register reports the address of the top of usable RAM which is used in \_SB.PCI0._CRS() to return a package to the host that includes the calculated size of RAM in the !DWordRange !ResourceProducer !AddressRangeMemory \_SB.PCI0.BUF0._X0D. 
     7 
     8{{{ 
     9OperationRegion (HBUS, PCI_Config, 0x40, 0xC0) 
     10Field (HBUS, DWordAcc, NoLock, Preserve) 
     11{ 
     12  // ...              
     13  Offset (0x5C),  // 0x5C + base 0x40 = offset 0x9C in PCI Config 
     14            ,   3,  
     15  TOUD,   6 // Intel Mobile 945 Express TOLUD register 
     16} 
     17 
     18// ... 
     19 
     20Method (_CRS, 0, Serialized) 
     21{ 
     22  // ... 
     23  CreateDWordField (BUF0, \_SB.PCI0._X0D._MIN, M1MN) 
     24  CreateDWordField (BUF0, \_SB.PCI0._X0D._MAX, M1MX) 
     25  CreateDWordField (BUF0, \_SB.PCI0._X0D._LEN, M1LN) 
     26  ShiftLeft (TOUD, 0x1B, M1MN) 
     27  Add (Subtract (M1MX, M1MN), One, M1LN) 
     28  Return (BUF0) 
     29} 
     30}}} 
     31PCIO is the root bridge in the Mobile Intel® 945 Express Chip-set. According to the data-sheet at 5.1.26: 
     32{{{ 
     33> TOLUD - Top of Low Used DRAM Register - bits 7:3 
     34>  
     35> B/D/F/Type:     0/0/0/PCI 
     36> Address Offset: 9Ch 
     37> Default Value:  08h 
     38> Access:         R/W/L; RO 
     39> Size:           8 bits 
     40>  
     41> This 8-bit register defines the Top of Usable Dram. Graphics Stolen Memory and TSEG 
     42> are within dram space defined under TOLUD. From the top of low used dram, (G)MCH 
     43> claims 1 to 64 MBs of DRAM for internal graphics if enabled and 1, 2 or 8 MBs of DRAM 
     44> for TSEG if enabled. 
     45}}} 
     46 
     47Depending on how the host OS ACPI core interprets the Field FieldUnit declarations, this could result in a bit from the following register, SMRAM, being interpreted as part of the TOLUD value. If the interpreter discards illegal bit-widths the entire register (value) could be ignored. 
     48=== Battery Technology reported as non-rechargeable === 
     49The definition for BAT0 incorrectly declares the battery as ''Primary'' which, according to the ACPI Specification v3.0, means: 
     50 
     51> Battery Technology DWORD 
     52> 0x00000000 – Primary (for example, non-rechargeable) 
     53> 0x00000001 – Secondary (for example, rechargeable)  
     54 
     55{{{ 
     56 Device (BAT0) 
     57 { 
     58  // ... 
     59  Method (_BIF, 0, NotSerialized)       // get Battery InFormation 
     60  { 
     61   Name (MULV, Zero) 
     62   Name (BATI, Package (0x0D) 
     63   { 
     64        Zero,                   // power_unit 
     65        0x2710,                 // design_capacity 
     66        0x2710,                 // last_full_capacity 
     67        Zero,                   // battery_technology 
     68        Ones,                   // design_voltage 
     69        0x03E8,                 // design_capacity_warning 
     70        0x0190,                 // design_capacity_low 
     71        0x64,                   // battery_capacity_granularity_1 
     72        0x64,                   // battery_capacity_granularity_2 
     73        "",                     // model_number 
     74        "",                     // serial_number 
     75        "LiOn",                         // battery_type 
     76        "Sony Corp."            // oem_info 
     77   }) 
     78}}} 
     79This leads to problems when the OS relies on the reported battery information: 
     80{{{ 
     81$ cat /proc/acpi/battery/BAT0/info 
     82present:                 yes 
     83design capacity:         57720 mWh 
     84last full capacity:      57720 mWh 
     85battery technology:      non-rechargeable 
     86design voltage:          118530 mV 
     87design capacity warning: 1000 mWh 
     88design capacity low:     400 mWh 
     89capacity granularity 1:  100 mWh 
     90capacity granularity 2:  100 mWh 
     91model number:             
     92serial number:            
     93battery type:            LiOn 
     94OEM info:                Sony Corp. 
     95}}}